Transistor 2N2222

RWF 300.00

2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications.

Description

2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications.

Specifications

  • Collector to base voltage is VCBO= 75 when the emitter is open
  • Dc continuous collector current is IC = 800mA
  • Total device power dissipation is PT = 1W
  • Maximum thermal resistance from junction to a case is R0JC= 150C0/W
  • Maximum thermal resistance from junction to ambient is R0JA= 325C0/W
  • Input capacitance = 25pF
  • Output capacitance = 8pF
  • Turn-on time =  25ns
  • Fall time = 60ns

 

Package include

1x Transistor 2N2222

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