Mosfet transistor IRF1607

RWF 1,500.00

IRF1607MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Description

IRF1607MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Specifications

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 75 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7.500 Ohm
  • Continuous Drain Current: 142 A
  • Total Gate Charge: 210 nC
  • Power Dissipation: 380 W

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