Description
IRF1607MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Specifications
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.500 Ohm
- Continuous Drain Current: 142 A
- Total Gate Charge: 210 nC
- Power Dissipation: 380 W
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