Mosfet transistor IRF1607

Fr 1,500.00

IRF1607MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

  Request Product
Share this product!

Description

IRF1607MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Specifications

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 75 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7.500 Ohm
  • Continuous Drain Current: 142 A
  • Total Gate Charge: 210 nC
  • Power Dissipation: 380 W

Reviews

There are no reviews yet.

Only logged in customers who have purchased this product may leave a review.

No more offers for this product!

General Inquiries

There are no inquiries yet.

Scroll to top

Up to 30% discount before Black Friday! Enjoy our best offer!

X
× Let me know how I can Help you!