MMBT5401 PNP SMD High voltage Transistor SOT-23

RWF 300.00

Description

PNP Epitaxial Silicon Transistor. This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. PNP General-Purpose Amplifier •

Specifications

  • Current collector (Max):600 mA
  • Voltage collector Emitter Breakdown(Max):15V
  • Vce Saturation (Max)@ Ib,Ic:500mV,50mA
  • Current-collector cutoff(Max):50nA(ICBO)
  • DC Current Gain(hEE)(min)A IC,Vce:[email protected],5v
  • Power Max:350 mW
  • Frequency Transition:300 MHz
  • Operating Temperature:–55°C-150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier device Package:SOT-23-3

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