IRF830 N-Channel Power MOSFET

Fr 1,000.00

IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V.

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Description

IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V.

Specifications

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 500 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.5 mΩ
  • Continuous Drain Current: 4.5 A
  • Total Gate Charge: 38 nC
  • Power Dissipation: 74 W

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