IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V.
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.5 mΩ
- Continuous Drain Current: 4.5 A
- Total Gate Charge: 38 nC
- Power Dissipation: 74 W