IRF5801

Fr 1,000.00

Type Designator: IRF5801

Type of Transistor: MOSFET

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Description

Type Designator: IRF5801

Type of Transistor: MOSFET

Specifications

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 999.999 Ohm
  • Continuous Drain Current: 0.6 A
  • Total Gate Charge: 3.9 nC
  • Power Dissipation: 2 W

 

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