IRF5620

RWF 1,000.00

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area

Specifications

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 77.500 Ohm
  • Continuous Drain Current: 24 A
  • Total Gate Charge: 25 nC
  • Power Dissipation: 144 W

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