IRF3710 MOSFET

Fr 1,000.00

Designed for high efficiency switch mode power supplies, Power factor correction and electronic lamp ballasts based On half bridge

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Description

Designed for high efficiency switch mode power supplies, Power factor correction and electronic lamp ballasts based On half bridge

Specifications

  • Drain-to-Source Breakdown Voltage: 100V
  • Gate-to-Source Voltage, max: ±20V
  • Drain-Source On-State Resistance, max: 000Ohm
  • Continuous Drain Current: 57A
  • Total Gate Charge: 7nC
  • Power Dissipation: 200W

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