IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET

Description

IRF2807 is Advanced  Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

Specifications

• Drain-to-Source Breakdown Voltage: 75 V.
• Gate-to-Source Voltage, max: ±20 V.
• Drain-Source On-State Resistance, max: 13.000 Ohm.
• Continuous Drain Current: 82 A.
• Total Gate Charge: 106.7 nC.
• Power Dissipation: 200 W.