IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET

Fr 1,000.00

IRF2807 is Advanced  Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

  Request Product
Share this product!

Description

IRF2807 is Advanced  Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

Specifications

  • Drain-to-Source Breakdown Voltage: 75 V.
  • Gate-to-Source Voltagemax: ±20 V.
  • Drain-Source On-State Resistance, max: 13.000 Ohm.
  • Continuous Drain Current: 82 A.
  • Total Gate Charge: 106.7 nC.
  • Power Dissipation: 200 W.

 

Reviews

There are no reviews yet.

Only logged in customers who have purchased this product may leave a review.

No more offers for this product!

General Inquiries

There are no inquiries yet.

Scroll to top

Up to 30% discount before Black Friday! Enjoy our best offer!

X
× Let me know how I can Help you!