IRF1607 MOSFET

Fr 1,000.00

Specifically designed for automotive applications, this Stripe Planar design of  Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Description

Specifically designed for automotive applications, this Stripe Planar design of  Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Specifications

  • Drain-to-Source Breakdown Voltage: 75V
  • Gate-to-Source Voltage, max: ±20V
  • Drain-Source On-State Resistance, max: 500Ohm
  • Continuous Drain Current: 142A
  • Total Gate Charge: 210nC
  • Power Dissipation: 380W

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