Specifically designed for automotive applications, this Stripe Planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Drain-to-Source Breakdown Voltage: 75V
- Gate-to-Source Voltage, max: ±20V
- Drain-Source On-State Resistance, max: 500Ohm
- Continuous Drain Current: 142A
- Total Gate Charge: 210nC
- Power Dissipation: 380W