IRF1405 MOSFET – 55V 169A N-Channel Power MOSFET 

Fr 1,000.00

IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area

Description

IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area

Specifications

  • Drain-to-Source Breakdown Voltage: 55V
  • Gate-to-Source Voltage, max: ±20V
  • Drain-Source On-State Resistance, max: 300Ohm
  • Continuous Drain Current: 133A
  • Total Gate Charge: 170nC
  • Power Dissipation: 200W

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