2N6028 silicon programmable uni junction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).
- Programmable − RBB, , IV and IP
- Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
- Low Gate to Anode Leakage Current − 10 nA Maximum
- High Peak Output Voltage − 11 V Typical
- Low Offset Voltage − 0.35 V Typical (RG = 10 k)
- Pb−Free Packages are Available