2N6028 Transistor

RWF 500.00

2N6028 silicon programmable uni junction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).

Description

2N6028 silicon programmable uni junction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).

Specifications

  • Programmable − RBB, , IV and IP
  • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
  • Low Gate to Anode Leakage Current − 10 nA Maximum
  • High Peak Output Voltage − 11 V Typical
  • Low Offset Voltage − 0.35 V Typical (RG = 10 k)
  • Pb−Free Packages are Available

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