YGW75N65F1 IGBT

The YGW75N65F1 is a high-current, high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a 650V collector-emitter voltage rating and 75A continuous current capability, this device offers an excellent balance of low conduction loss, fast switching speed, and high reliability. Packaged in a robust TO-247 through-hole package, the YGW75N65F1 is ideal for inverters, motor drives, welding machines, UPS systems, and industrial power supplies where e...

3,000 RWF