TTC5200 NPN Transistor

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. Specifications Collector to emitter voltage (Vce) is 230V Collector to base voltage of 230V Collector current (Ic) is 15A Power dissipation (pd) is 150W Junction temperature of 150°C Current gain of 35 at 7A collector current Collector to emitter saturation voltage of 3V Collector to emitter breakdown vo...

2,500 RWF