IRFP260N MOSFET - 200V 50A N-Channel Power

Specifications Type: n-channel Drain-to-Source Breakdown Voltage: 200 V Gate-to-Source Voltage, max: ±20 V Drain-Source On-State Resistance, max: 40 mΩ Continuous Drain Current: 49 A Total Gate Charge: 156 nC Power Dissipation: 300 W Package: TO-247AC

1,700 RWF