IRFP140N Power N-Channel MOSFET Transistor

Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 140 W Maximum Drain-Source Voltage 'Vds': 100 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 33 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 94(max) nC Rise Time (tr): 39 nS Drain-Source Capacitance (Cd): 330 pF Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm Package: TO247

1,500 RWF