IRF9540 P-channel MOSFET

Specifications P-channel MOSFET Dynamic dv/dt rating Low threshold voltage High-speed switching Low turn-on resistance Repetitive avalanche rated Simple drive requirement Ease of paralleling Drain-to-source voltage VDS: -100 V Maximum Continuous drain current ID: -19 A Maximum Pulse drain current: -72 A Maximum Power dissipation PD: 150 W Gate-to-source voltage VGS: ±20 V Peak diode recovery dv/dt: -5.5 V/ns Total gate charge QG: 61 nC On-state r...

600 RWF