IRF830 N-Channel Power MOSFET

IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. Specifications Type: n-channel Drain-to-Source Breakdown Voltage: 500 V Gate-to-Source Voltage, max: ±20 V Drain-Source On-State Resistance, max: 1.5 mΩ Continuous Drain Current: 4.5 A Total Gate Charge: 38 nC Power Dissipation: 74 W

1,000 RWF