IRF8010 MOSFET Transistor

FEATURES : Type Designator: IRF8010  Type of Transistor: MOSFET  Type of Control Channel: N -Channel  - Maximum Power Dissipation: 260 W   - Maximum Drain-Source Voltage: 100 V   - Maximum Gate-Source Voltage: 20 V   - Maximum Gate-Threshold Voltage: 4 V  - Maximum Drain Current: 80 A  - Maximum Junction Temperature: 175 °C  - Total Gate Charge: 81 nC  - Rise Time: 130 nS - Output Capacitance: 480 pF - Maximum Drain-Source On-State Resistance: 0.015 Ohm

800 RWF