IRF5801

Type Designator: IRF5801 Type of Transistor: MOSFET Specifications Type: n-channel Drain-to-Source Breakdown Voltage: 200 V Gate-to-Source Voltage, max: ±30 V Drain-Source On-State Resistance, max: 999.999 Ohm Continuous Drain Current: 0.6 A Total Gate Charge: 3.9 nC Power Dissipation: 2 W  

1,000 RWF