IRF5620

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area Specifications Type: n-channel Drain-to-Source Breakdown Voltage: 200 V Gate-to-Source Voltage, max: ±20 V Drain-Source On-State Resistance, max: 77.500 Ohm Continuous Drain Current: 24 A Total Gate Charge: 25 nC Power Dissipation: 144 W

1,000 RWF