IRF3710 MOSFET

Designed for high efficiency switch mode power supplies, Power factor correction and electronic lamp ballasts based On half bridge Specifications Drain-to-Source Breakdown Voltage: 100V Gate-to-Source Voltage, max: ±20V Drain-Source On-State Resistance, max: 000Ohm Continuous Drain Current: 57A Total Gate Charge: 7nC Power Dissipation: 200W

600 RWF