IRF2807 MOSFET - 75V 82A N-Channel HEXFET Power MOSFET

IRF2807 is Advanced  Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area Specifications Drain-to-Source Breakdown Voltage: 75 V. Gate-to-Source Voltage, max: ±20 V. Drain-Source On-State Resistance, max: 13.000 Ohm. Continuous Drain Current: 82 A. Total Gate Charge: 106.7 nC. Power Dissipation: 200 W.  

1,000 RWF