IRF1607 MOSFET

Specifically designed for automotive applications, this Stripe Planar design of  Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Specifications Drain-to-Source Breakdown Voltage: 75V Gate-to-Source Voltage, max: ±20V Drain-Source On-State Resistance, max: 500Ohm Continuous Drain Current: 142A Total Gate Charge: 210nC Power Dissipation: 380W

1,000 RWF