IRF1405 MOSFET - 55V 169A N-Channel Power MOSFET 

IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area Specifications Drain-to-Source Breakdown Voltage: 55V Gate-to-Source Voltage, max: ±20V Drain-Source On-State Resistance, max: 300Ohm Continuous Drain Current: 133A Total Gate Charge: 170nC Power Dissipation: 200W

1,000 RWF