The IKZ75N65ES5, marked K75EES5, is a high-power TRENCHSTOP™ 5 IGBT manufactured by Infineon. It is designed for high-speed power switching and comes in the TO-247-4 package with an additional Kelvin emitter connection.

Key Specifications

Parameter	Specification
Part number	IKZ75N65ES5
Marking	K75EES5
Device type	IGBT
Technology	TRENCHSTOP™ 5
Collector-emitter voltage	650 V
Nominal collector current	75 A
Maximum DC collector current	80 A under specified thermal conditions
Pulsed collector current	300 A
Package	TO-247-4
VCE(sat)	1.42 V at nominal conditions
Maximum junction temperature	175°C
Gate charge	164 nC
Power dissipation	395 W at 25°C case temperature
Switching frequency range	15–40 kHz

Infineon's current product page specifies 650 V and maximum collector current of 80 A under its stated conditions; the original datasheet identifies the device's nominal 75 A rating.

What Makes the TO-247-4 Version Different?

The fourth pin is a Kelvin emitter connection. This is an important feature of the IKZ75N65ES5.

A conventional TO-247-3 package has three connections:

Gate — Collector — Emitter

The TO-247-4 version adds a separate Kelvin emitter (K) connection. This gives the gate-driver circuit a cleaner feedback/reference path and reduces unwanted inductance in the gate-emitter control loop. Infineon specifically describes this as providing an ultra-low-inductance gate-emitter control loop for improved switching performance.

Pin Identification

For the IKZ75N65ES5:

G = Gate
C = Collector
E = Emitter
K = Kelvin Emitter

The datasheet specifically warns that the Emitter and Kelvin Emitter pins are not interchangeable.

Built-in Antiparallel Diode

The IGBT is co-packaged with a full-current-rated RAPID 1 fast and soft antiparallel diode. This is useful in power-conversion circuits where reverse current and commutation paths are required.

Switching Performance

The device is designed for both hard- and soft-switching applications. Infineon specifies:

Turn-on delay: 46 ns
Turn-off delay: 405 ns
Turn-on energy: 1.3 mJ
Turn-off energy: 1.5 mJ
Gate charge: 164 nC
Reverse-recovery time of the diode: approximately 72 ns

The combination of the TRENCHSTOP™ 5 technology and Kelvin-emitter package is intended to reduce switching losses and improve power-converter efficiency.

Typical Applications

The IKZ75N65ES5 is suitable for:

Industrial UPS systems
Switch-mode power supplies (SMPS)
Energy-storage systems
EV charging equipment
Battery chargers
Welding converters
High-power inverters
Power-factor correction
DC-AC converters
High-frequency power converters

IKZ75N65ES5 / K75EES5 — 650V High-Speed IGBT