DD5011 D5011 5011 TO-220

Type Designator: 2SD2253 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 50 W Maximum Collector-Base Voltage |Vcb|: 1700 V Maximum Collector-Emitter Voltage |Vce|: 600 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 6 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 3 MHz Collector Capacitance (Cc): 250 pF Forward Current Transfer Ratio (hFE), MIN: 28

2,000 RWF