2N6028 Transistor

2N6028 silicon programmable uni junction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η). Specifications Programmable − RBB, , IV and IP Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA Low Gate to Anode Leakage Current − 10 nA Maximum High Peak Output Voltage − 11 V Typical Low Offset Voltage − 0.35 V Typical (RG = 10 k) Pb−Free P...

500 RWF